NTZD3152PT1G

onsemi

MOSFET 2P-CH 20V 430MA SOT563

onsemi NTZD3152PT1G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTZD3152PT1G specifications
Parameter / AttributeSpecification / Value
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C430mA
Power - max250mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs900mOhm @ 430mA, 4.5V
Gate charge (Qg) (Max) @ vgs2.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds175pF @ 16V
NTZD3152PT1G
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