NTUD3169CZT5G

onsemi

MOSFET N/P-CH 20V SOT963

onsemi NTUD3169CZT5G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTUD3169CZT5G specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C220mA, 200mA
Power - max125mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-963
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs1.5Ohm @ 100mA, 4.5V
Input capacitance (Ciss) (Max) @ vds12.5pF @ 15V
NTUD3169CZT5G
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