NTTFS4C02NTAG

onsemi

MOSFET N-CH 30V 170A 8WDFN

onsemi NTTFS4C02NTAG
Download datasheet (PDF)
[IN STOCK] In Stock: 91 pcs
$0.33/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTTFS4C02NTAG specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C170A (Tc)
Power dissipation91W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs2.25mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2980 pF @ 15 V
NTTFS4C02NTAG
[ALLOC] verified
Quote