NTTFS1D8N02P1E
onsemi
MOSFET N-CH 25V 20A/152A 8PQFN
[IN STOCK] In Stock: 4 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta), 152A (Tc) |
| Power dissipation | 800mW (Ta), 48W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2V @ 700µA |
| Rds on (Max) @ id, vgs | 1.3mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3159 pF @ 13 V |
NTTFS1D8N02P1E
[ALLOC] verified