NTS4173PT1G

onsemi

MOSFET P-CH 30V 1.2A SC70-3

onsemi NTS4173PT1G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTS4173PT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C1.2A (Ta)
Power dissipation290mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 1.2A, 10V
Gate charge (Qg) (Max) @ vgs10.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds430 pF @ 15 V
NTS4173PT1G
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