NTS2101PT1G

onsemi

MOSFET P-CH 8V 1.4A SC70-3

onsemi NTS2101PT1G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTS2101PT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C1.4A (Ta)
Power dissipation290mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs6.4 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds640 pF @ 8 V
NTS2101PT1G
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