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onsemi NTRV4101PT1G

onsemi NTRV4101PT1G

MPNNTRV4101PT1G
End of Life

MOSFET P-CH 20V 1.8A SOT23-3

$0.59Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTRV4101PT1G specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C1.8A (Ta)
Power dissipation420mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs85mOhm @ 1.6A, 4.5V
Gate charge (Qg) (Max) @ vgs8.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds675 pF @ 10 V