NTR2101PT1G

onsemi

MOSFET P-CH 8V SOT23-3

onsemi NTR2101PT1G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTR2101PT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C3.7A (Ta)
Power dissipation960mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs52mOhm @ 3.5A, 4.5V
Gate charge (Qg) (Max) @ vgs15 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1173 pF @ 4 V
NTR2101PT1G
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