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onsemi NTP6412ANG

onsemi NTP6412ANG

MPNNTP6412ANG
End of Life

MOSFET N-CH 100V 58A TO220AB

$2.16Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTP6412ANG specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C58A (Tc)
Power dissipation167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs18.2mOhm @ 58A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3500 pF @ 25 V