NTNS3193NZT5G

onsemi

MOSFET N-CH 20V 224MA 3XLLGA

onsemi NTNS3193NZT5G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTNS3193NZT5G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C224mA (Ta)
Power dissipation120mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-XFLGA
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs1.4Ohm @ 100mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds15.8 pF @ 15 V
NTNS3193NZT5G
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