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onsemi NTMS5P02R2G

onsemi NTMS5P02R2G

MPNNTMS5P02R2G
End of Life

MOSFET P-CH 20V 3.95A 8SOIC

$0.88Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMS5P02R2G specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.95A (Ta)
Power dissipation790mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.25V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 5.4A, 4.5V
Gate charge (Qg) (Max) @ vgs35 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 16 V