NTMFS6H818NLT1G

onsemi

onsemi NTMFS6H818NLT1G
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[IN STOCK] In Stock: 10 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS6H818NLT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C22A (Ta), 135A (Tc)
Power dissipation3.8W (Ta), 140W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2V @ 190µA
Rds on (Max) @ id, vgs3.2mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3844 pF @ 40 V
NTMFS6H818NLT1G
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