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onsemi NTMFS5H414NLT1G — Discrete Semiconductors

onsemi NTMFS5H414NLT1G

MPNNTMFS5H414NLT1G
Obsolete

MOSFET N-CH 40V 35A/210A 5DFN

$5.3000Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS5H414NLT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Ta), 210A (Tc)
Power dissipation3.1W (Ta), 110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4550 pF @ 20 V