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onsemi NTMFS5C646NT1G — Discrete Semiconductors

onsemi NTMFS5C646NT1G

MPNNTMFS5C646NT1G
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$2.28 / ea

51 in stock — maximum per order · 3–4 days lead time

$1.92 / ea from 10 pcs

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

NTMFS5C646NT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Ta), 93A (Tc)
Power dissipation3.7W (Ta), 79W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 80µA
Rds on (Max) @ id, vgs5mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs19.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 10 V