NTMFS4H01NFT1G

onsemi

onsemi NTMFS4H01NFT1G
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MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS4H01NFT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C54A (Ta), 334A (Tc)
Power dissipation3.2W (Ta), 125W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs0.7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs82 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5538 pF @ 12 V
NTMFS4H01NFT1G
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