NTMFS4C022NT1G

onsemi

MOSFET N-CH 30V 30A/136A 5DFN

onsemi NTMFS4C022NT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS4C022NT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Ta), 136A (Tc)
Power dissipation3.1W (Ta), 64W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs1.7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs45.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3071 pF @ 15 V
NTMFS4C022NT1G
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