NTMFS4C020NT1G

onsemi

onsemi NTMFS4C020NT1G
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[IN STOCK] In Stock: 18 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS4C020NT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C47A (Ta), 303A (Tc)
Power dissipation3.2W (Ta), 134W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs0.7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs139 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10144 pF @ 15 V
NTMFS4C020NT1G
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