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onsemi NTMFS4841NHT1G — Discrete Semiconductors

onsemi NTMFS4841NHT1G

MPNNTMFS4841NHT1G
Obsolete
$0.8300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4841NHT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.6A (Ta), 59A (Tc)
Power dissipation870mW (Ta), 41.7W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 11.5 V
Input capacitance (Ciss) (Max) @ vds2113 pF @ 12 V