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onsemi NTMFS020N06CT1G — Discrete Semiconductors

onsemi NTMFS020N06CT1G

MPNNTMFS020N06CT1G
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$0.7346Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS020N06CT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Ta), 28A (Tc)
Power dissipation3.4W (Ta), 31W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 20µA
Rds on (Max) @ id, vgs19.6mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs5.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds355 pF @ 30 V