NTMFS015N10MCLT1G

onsemi

MOSFET N-CH 100V 10.5A/54A 5DFN

onsemi NTMFS015N10MCLT1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMFS015N10MCLT1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10.5A (Ta), 54A (Tc)
Power dissipation3W (Ta), 79W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 282µA
Rds on (Max) @ id, vgs12.2mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13380 pF @ 50 V
NTMFS015N10MCLT1G
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