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onsemi NTMD6P02R2G

onsemi NTMD6P02R2G

MPNNTMD6P02R2G
End of Life

MOSFET 2P-CH 20V 4.8A 8SOIC

$1.22Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMD6P02R2G specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.8A
Power - max750mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 6.2A, 4.5V
Gate charge (Qg) (Max) @ vgs35nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1700pF @ 16V