NTMC083NP10M5L

onsemi

MOSFET N/P-CH 100V 2.9A 8SOIC

onsemi NTMC083NP10M5L
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTMC083NP10M5L specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Power - max1.6W (Ta), 3.1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
Case8-SOIC (0.154\", 3.90mm Width)
Rds on (Max) @ id, vgs83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs5nC @ 10V, 8.4nC @ 10V
Input capacitance (Ciss) (Max) @ vds222pF @ 50V, 525pF @ 50V
NTMC083NP10M5L
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