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onsemi NTLJD4116NT1G

onsemi NTLJD4116NT1G

MPNNTLJD4116NT1G
End of Life

MOSFET 2N-CH 30V 2.5A 6WDFN

$0.81Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTLJD4116NT1G specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.5A
Power - max710mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs6.5nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds427pF @ 15V