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onsemi NTLJD3115PT1G

onsemi NTLJD3115PT1G

MPNNTLJD3115PT1G
End of Life

MOSFET 2P-CH 20V 2.3A 6-WDFN

$0.72Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTLJD3115PT1G specifications
ParameterValue
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C2.3A
Power - max710mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs6.2nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds531pF @ 10V