NTJD5121NT1G

onsemi

MOSFET 2N-CH 60V 295MA SOT363

onsemi NTJD5121NT1G
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTJD5121NT1G specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C295mA
Power - max250mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs1.6Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.9nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds26pF @ 20V
NTJD5121NT1G
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