NTJD4105CT1G

onsemi

MOSFET N/P-CH 20V/8V SOT-363

onsemi NTJD4105CT1G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTJD4105CT1G specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V, 8V
Current - continuous drain (Id) @ 25°C630mA, 775mA
Power - max270mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs375mOhm @ 630mA, 4.5V
Gate charge (Qg) (Max) @ vgs3nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds46pF @ 20V
NTJD4105CT1G
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