NTHS4101PT1G

onsemi

MOSFET P-CH 20V 4.8A CHIPFET

onsemi NTHS4101PT1G
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[IN STOCK] In Stock: 44 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTHS4101PT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C4.8A (Tj)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs34mOhm @ 4.8A, 4.5V
Gate charge (Qg) (Max) @ vgs35 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 16 V
NTHS4101PT1G
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