onsemi NTHL022N120M3S
MPNNTHL022N120M3S
End of Life
SILICON CARBIDE (SIC) MOSFET ELI
$34.44Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 18V |
| Current - continuous drain (Id) @ 25°C | 68A (Tc) |
| Power dissipation | 352W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +22V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.4V @ 20mA |
| Rds on (Max) @ id, vgs | 30mOhm @ 40A, 18V |
| Gate charge (Qg) (Max) @ vgs | 139 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 3130 pF @ 800 V |