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onsemi NTHC5513T1G

onsemi NTHC5513T1G

MPNNTHC5513T1G
End of Life

MOSFET N/P-CH 20V CHIPFET

$1.38Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTHC5513T1G specifications
ParameterValue
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C2.9A, 2.2A
Power - max1.1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 2.9A, 4.5V
Gate charge (Qg) (Max) @ vgs4nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds180pF @ 10V