NTH4L160N120SC1
onsemi
SICFET N-CH 1200V 17.3A TO247
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 17.3A (Tc) |
| Power dissipation | 111W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +25V, -15V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 4.3V @ 2.5mA |
| Rds on (Max) @ id, vgs | 224mOhm @ 12A, 20V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 665 pF @ 800 V |
NTH4L160N120SC1
[ALLOC] verified