NTH4L060N090SC1
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 15V, 18V |
| Current - continuous drain (Id) @ 25°C | 46A (Tc) |
| Power dissipation | 221W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +22V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 4.3V @ 5mA |
| Rds on (Max) @ id, vgs | 43mOhm @ 20A, 18V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 1770 pF @ 450 V |
NTH4L060N090SC1
[ALLOC] verified