NTGD4167CT1G
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
[IN STOCK] In Stock: 504 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 2.6A, 1.9A |
| Power - max | 900mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 90mOhm @ 2.6A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 5.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 295pF @ 15V |
NTGD4167CT1G
[ALLOC] verified