NTGD3148NT1G

onsemi

MOSFET 2N-CH 20V 3A 6TSOP

onsemi NTGD3148NT1G
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[IN STOCK] In Stock: 1,416 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTGD3148NT1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C3A
Power - max900mW
Operating temperature-50°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 3.5A, 4.5V
Gate charge (Qg) (Max) @ vgs3.8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds300pF @ 10V
NTGD3148NT1G
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