NTF3055L108T1G

onsemi

MOSFET N-CH 60V 3A SOT223

onsemi NTF3055L108T1G
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTF3055L108T1G specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±15V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs120mOhm @ 1.5A, 5V
Gate charge (Qg) (Max) @ vgs15 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 25 V
NTF3055L108T1G
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