NTE4151PT1G

onsemi

MOSFET P-CH 20V 760MA SC89-3

onsemi NTE4151PT1G
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTE4151PT1G specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C760mA (Tj)
Power dissipation313mW (Tj)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
CaseSC-89, SOT-490
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 350mA, 4.5V
Gate charge (Qg) (Max) @ vgs2.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds156 pF @ 5 V
NTE4151PT1G
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