Skip to main content
onsemi NTE4151PT1G

onsemi NTE4151PT1G

MPNNTE4151PT1G
End of Life

MOSFET P-CH 20V 760MA SC89-3

$0.39Ref. price · indicative, final on quote
PackagingSC-89, SOT-490
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTE4151PT1G specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C760mA (Tj)
Power dissipation313mW (Tj)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
CaseSC-89, SOT-490
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs360mOhm @ 350mA, 4.5V
Gate charge (Qg) (Max) @ vgs2.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds156 pF @ 5 V