onsemi NTD4858NA-1G
MPNNTD4858NA-1G
Obsolete
$0.8900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 25 V |
| Current - continuous drain (Id) @ 25°C | 11.2A (Ta), 73A (Tc) |
| Power dissipation | 1.3W (Ta), 54.5W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1563 pF @ 12 V |