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onsemi NTD4858N-35G — Discrete Semiconductors

onsemi NTD4858N-35G

MPNNTD4858N-35G
Obsolete
$0.5758Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTD4858N-35G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11.2A (Ta), 73A (Tc)
Power dissipation1.3W (Ta), 54.5W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Stub Leads, IPak
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs6.2mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs19.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1563 pF @ 12 V