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onsemi NTD30N02T4G

onsemi NTD30N02T4G

MPNNTD30N02T4G
End of Life

N-CHANNEL POWER MOSFET

$0.28Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTD30N02T4G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage24 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C30A (Ta)
Power dissipation75W (Tj)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs14.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 20 V