NTBL050N65S3H

onsemi

MOSFET - POWER,NCHANNEL, SUPERFE

onsemi NTBL050N65S3H
Download datasheet (PDF)
[IN STOCK] In Stock: 2 pcs
$12.18/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NTBL050N65S3H specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C49A (Tc)
Power dissipation305W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id4V @ 4.8mA
Rds on (Max) @ id, vgs50mOhm @ 24.5A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4880 pF @ 400 V
NTBL050N65S3H
[ALLOC] verified
Quote