onsemi NTBG060N065SC1
MPNNTBG060N065SC1
End of Life
SILICON CARBIDE (SIC) MOSFET - 4
$13.77Ref. price · indicative, final on quote
PackagingTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 15V, 18V |
| Current - continuous drain (Id) @ 25°C | 46A (Tc) |
| Power dissipation | 170W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +22V, -8V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Vgs(th) (Max) @ id | 4.3V @ 6.5mA |
| Rds on (Max) @ id, vgs | 70mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 74 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 1473 pF @ 325 V |