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onsemi NTB011N15MC — Discrete Semiconductors

onsemi NTB011N15MC

MPNNTB011N15MC
End of Life

NTB011N15MC

$4.71Ref. price · indicative, final on quote
PackagingTO-263 (D2PAK)
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTB011N15MC specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C12.5A (Ta), 75.4A (Tc)
Power dissipation3.75W (Ta), 136.4W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ id4.5V @ 223µA
Rds on (Max) @ id, vgs10.9mOhm @ 41A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2810 pF @ 75 V