NSVBAS16W1T1G

onsemi · Automotive, AEC-Q101 Series

DIODE GEN PURP 100V 200MA SC88

onsemi NSVBAS16W1T1G
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NSVBAS16W1T1G specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 100 mA
Current - reverse leakage @ vr1 µA @ 100 V
Current - average rectified200mA
Operating temperature - junction150°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Capacitance @ vr,2pF @ 0V, 1MHz
Reverse recovery time3 ns
NSVBAS16W1T1G
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