NDS355AN

onsemi

MOSFET N-CH 30V 1.7A SUPERSOT3

onsemi NDS355AN
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NDS355AN specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.7A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs85mOhm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds195 pF @ 15 V
NDS355AN
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