NCV57200DR2G

onsemi · Automotive, AEC-Q100 Series

ISOLATED COMPACT IGBT GATE DRIVE

onsemi NCV57200DR2G
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[IN STOCK] In Stock: 281 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NCV57200DR2G specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q100
Gate typeIGBT
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Supply voltage20V
Logic voltage - VIL, VIH0.9V, 2.4V
High side voltage - max (Bootstrap)800 V
Current - peak output (Source, sink)1.9A, 2.3A
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers1
Driven configurationHalf-Bridge
Rise (Fall time)13ns, 8ns
NCV57200DR2G
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