Active production — single-channel isolated gate driver for SiC and IGBT gates
The onsemi NCV57001DWR2G is an active-production single-channel isolated gate driver using capacitive coupling, rated for 1200 Vrms isolation. It delivers 7.8 A peak source and 7.1 A peak sink current — enough to drive the gate capacitance of medium-power SiC MOSFETs and IGBT modules in automotive traction inverters or DC-DC converters.
Switching performance and noise immunity for the gate-drive loop
This keeps the dead-time margin tight in a half-bridge leg — the 90 ns window is the worst-case latency from the PWM input edge to the gate output transition. Common-mode transient immunity is a minimum 100 kV/µs, which means the output state does not glitch when the isolated side sees a fast voltage slew — critical in a motor-drive phase where the switch-node voltage swings from rail to ground in tens of nanoseconds.
Package, approvals, and compliance paperwork
Approved by UL and VDE for reinforced isolation, and ROHS3 compliant per the lifecycle record.