Automotive isolated gate driver with 1200Vrms barrier
The onsemi NCV57000DWR2G is a single-channel isolated gate driver built on capacitive coupling technology, delivering 1200Vrms galvanic isolation across the barrier. It is rated Automotive grade and carries AEC-Q100 qualification, so it is specified for under-hood and chassis-domain power train inverters, DC-DC converters, and on-board charger gate drive stages where the isolation voltage must withstand traction-battery potentials.
Gate drive current and switching speed
Output current is rated 7.8 A source, 7.1 A sink — enough to charge and discharge the gate capacitance of a large IGBT or SiC MOSFET in tens of nanoseconds. The typical rise/fall time is 10 ns / 15 ns, and the propagation delay is 90 ns max in both directions, so the turn-on and turn-off edges are symmetric within the same switching cycle. Common mode transient immunity is a minimum 100 kV/µs. In a motor-drive half-bridge, the high-side gate driver sees a dv/dt of several kV/µs at the switch node; this CMTI rating means the output state does not glitch when the floating ground jumps during hard switching.
Temperature range and package
Output supply range is 0 V to 24 V, compatible with standard gate drive bias rails for Si IGBTs and SiC MOSFETs.