NCP81075DR2G

onsemi

IC GATE DRVR HI/LOW SIDE 8SOIC

onsemi NCP81075DR2G
Download datasheet (PDF)
[IN STOCK] In Stock: 2 pcs
$2.78/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NCP81075DR2G specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage8.5V ~ 20V
Logic voltage - VIL, VIH0.8V, 2.7V
High side voltage - max (Bootstrap)200 V
Current - peak output (Source, sink)4A, 4A
Operating temperature-40°C ~ 140°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)8ns, 7ns
NCP81075DR2G
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