Gate-drive isolator with 5 kV reinforced isolation
The onsemi NCD57090CDWR2G is a single-channel digital isolator built for gate-drive applications, delivering 6.5 A peak output current across a reinforced 5000 Vrms isolation barrier. Capacitive coupling technology keeps propagation delay to 90 ns max and rise/fall times to 13 ns typical, which matters when driving a power MOSFET or IGBT gate at switching frequencies where timing jitter eats into the dead-band margin. The common-mode transient immunity is rated at 100 kV/µs minimum, so the output stays clean when the switching node slews hard — a spec that separates a gate-drive isolator from a generic digital isolator in a motor-drive or inverter stage.
Output drive and supply rail flexibility
Both high and low output legs source and sink 6.5 A symmetrically, which means the gate charge of a large IGBT or SiC MOSFET is delivered and pulled out at the same rate — no asymmetric drive that would bias the turn-on vs turn-off loss. The output supply rail accepts 0 V to 32 V, covering the standard 15 V and 18 V gate-drive rails for silicon power devices and the higher 20 V to 25 V rails used with some SiC MOSFETs. Operating temperature spans -40°C to 125°C, which is the industrial junction-temperature band for a power-stage component mounted near hot magnetics or a heatsink.
Package, approvals, and compliance
Housed in an 8-SOIC wide-body (7.50 mm width) package, the NCD57090CDWR2G offers 8 mm creepage distance typical for reinforced isolation — the footprint matches standard SOIC-8 land patterns with the wider body for clearance.