Isolation and drive capability for gate-drive applications
The NCD57001DWR2G is a single-channel digital isolator from onsemi built on capacitive coupling technology, delivering 5000Vrms of galvanic isolation in a 16-SOIC wide-body package. It is designed specifically as an isolated gate driver for power switches — the 7.8A peak source and 7.1A peak sink output directly drive the gate capacitance of IGBTs and SiC MOSFETs without an external buffer stage. The 100kV/µs minimum common-mode transient immunity (CMTI) means the output stays latched to the correct state when the floating ground plane jumps through a hard-switching event — a requirement for motor-drive and inverter half-bridge topologies where the low-side switch sees the full DC-bus voltage slew.
Timing margins and temperature range
Propagation delay is matched at 90ns max for both tpLH and tpHL, with pulse-width distortion held to 15ns max. The 10ns typical rise and 15ns fall time keep the gate-drive waveform edges clean enough to avoid Miller turn-on in the power switch, provided the gate-loop inductance is kept under 20nH. The 0V to 24V output supply range matches the gate-drive rails used for standard IGBTs and SiC MOSFETs.