MUN5330DW1T1G

onsemi

TRANS PREBIAS 1NPN 1PNP 50V SC88

onsemi MUN5330DW1T1G
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MUN5330DW1T1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce3 @ 5mA, 10V
Power - max250mW
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)1kOhms
Resistor - emitter base (R2)1kOhms
Vce saturation (Max) @ ib, ic250mV @ 5mA, 10mA
MUN5330DW1T1G
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